RAM Cathode Principle
Solving the challenges of the past! We have significantly improved the film formation speed while maintaining low damage characteristics.
In conventional planar sputtering, significant damage is inflicted on the substrate, and in opposing sputtering, the film formation speed is slow, posing practical challenges. Our "RAM Cathode" has succeeded in generating dense plasma near the target surface by surrounding the target on all sides. By having argon ions strike the target with great force and vigor, we have resolved the issues that existed previously. 【Features】 ■ Reduces damage to the substrate by over 60% compared to conventional planar cathodes ■ Achieves film formation speeds more than three times faster than conventional opposing cathodes *For more details, please refer to the PDF document or feel free to contact us.
- Company：京浜ラムテック
- Price：Other
